物料参数
| Architecture: | FET / CMOS Input, Voltage FB |
| Number of channels: | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 7 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 13 |
| GBW (typ) (MHz): | 350 |
| BW at Acl (MHz): | 650 |
| Acl, min spec gain (V/V): | 2 |
| Slew rate (typ) (V/µs): | 2550 |
| Vn at flatband (typ) (nV√Hz): | 8.9 |
| Vn at 1 kHz (typ) (nV√Hz): | 8.9 |
| Iq per channel (typ) (mA): | 30.5 |
| Vos (offset voltage at 25°C) (max) (mV): | 5 |
| Rail-to-rail: | No |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 85 |
| CMRR (typ) (dB): | 70 |
| Input bias current (max) (pA): | 50 |
| Offset drift (typ) (µV/°C): | 10 |
| Iout (typ) (mA): | 70 |
| 2nd harmonic (dBc): | 79 |
| 3rd harmonic (dBc): | 100 |
| Frequency of harmonic distortion measurement (MHz): | 10 |
| Architecture: | FET / CMOS Input, Voltage FB |
| Number of channels: | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 7 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 13 |
| GBW (typ) (MHz): | 350 |
| BW at Acl (MHz): | 650 |
| Acl, min spec gain (V/V): | 2 |
| Slew rate (typ) (V/µs): | 2550 |
| Vn at flatband (typ) (nV√Hz): | 8.9 |
| Vn at 1 kHz (typ) (nV√Hz): | 8.9 |
| Iq per channel (typ) (mA): | 30.5 |
| Vos (offset voltage at 25°C) (max) (mV): | 5 |
| Rail-to-rail: | No |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 85 |
| CMRR (typ) (dB): | 70 |
| Input bias current (max) (pA): | 50 |
| Offset drift (typ) (µV/°C): | 10 |
| Iout (typ) (mA): | 70 |
| 2nd harmonic (dBc): | 79 |
| 3rd harmonic (dBc): | 100 |
| Frequency of harmonic distortion measurement (MHz): | 10 |
无库存
