OPA659

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描述: 650MHz 单位增益稳定 JFET 输入放大器

物料参数

Architecture:FET / CMOS Input, Voltage FB
Number of channels:1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V):7
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V):13
GBW (typ) (MHz):350
BW at Acl (MHz):650
Acl, min spec gain (V/V):2
Slew rate (typ) (V/µs):2550
Vn at flatband (typ) (nV√Hz):8.9
Vn at 1 kHz (typ) (nV√Hz):8.9
Iq per channel (typ) (mA):30.5
Vos (offset voltage at 25°C) (max) (mV):5
Rail-to-rail:No
Rating:Catalog
Operating temperature range (°C):-40 to 85
CMRR (typ) (dB):70
Input bias current (max) (pA):50
Offset drift (typ) (µV/°C):10
Iout (typ) (mA):70
2nd harmonic (dBc):79
3rd harmonic (dBc):100
Frequency of harmonic distortion measurement (MHz):10
Architecture:FET / CMOS Input, Voltage FB
Number of channels:1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V):7
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V):13
GBW (typ) (MHz):350
BW at Acl (MHz):650
Acl, min spec gain (V/V):2
Slew rate (typ) (V/µs):2550
Vn at flatband (typ) (nV√Hz):8.9
Vn at 1 kHz (typ) (nV√Hz):8.9
Iq per channel (typ) (mA):30.5
Vos (offset voltage at 25°C) (max) (mV):5
Rail-to-rail:No
Rating:Catalog
Operating temperature range (°C):-40 to 85
CMRR (typ) (dB):70
Input bias current (max) (pA):50
Offset drift (typ) (µV/°C):10
Iout (typ) (mA):70
2nd harmonic (dBc):79
3rd harmonic (dBc):100
Frequency of harmonic distortion measurement (MHz):10
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